Prof. Gong Xiao is currently the Head of Department for SiC Power Electronics in the Institute of Microelectronics, A*STAR. He obtained his PhD from NUS in 2013 and was a Visiting Scientist at MIT in the year of 2014. His research interest includes advanced transistors and emerging memories for in-memory computing, ultra-wide bandgap power device technology, monolithic 3D integration, and opto-electronic integrated circuits. He has won many awards, including the Bronze Medal at the 6th TSMC Outstanding Student Researcher Award, the Best Student Paper Award at VLSI Symposium (2017, 2021, and 2024), the Best Demo Paper Award at VLSI Symposium (2022, 2023, and 2025), the Best Paper Award in EDTM (2025), the Best Student Paper Award at ICICDT (2019, 2021, 2023, and 2024), Emerging Leaders in Journal of Physics D 2021, and NUS Engineering Teaching Excellence Award (2018, 2023, and 2024). He has more than 420 publications in international journals and conferences, including more than 110 papers in IEDM and VLSI Symposium. He has delivered over 40 short courses/tutorial/invited talks in major conferences, including DRC, EDTM, VLSI-TSA, SSDM, ECS, MRS, etc. He is the Technical Program Chair in ICICDT (2019, 2022, 2023, 2024) and Sub-committee Chair in ICICDT (2021) and EDTM (2022, 2023, 2025, 2026), and in the technical committees of IEDM (2021, 2022), IMW (2025, 2026), VLSI-TSA (2022, 2023, 2024, 2025, 2026), ECS (2014, 2016, 2018, 2020, 2022, and 2024), ICMAT (2017), EDTM (2017 to 2021), IWJT (2021, 2023, 2025), IRPS (2026), IPFA (2026), etc. He is the Editor of IEEE Electron Device Letters.